武汉大学材料系刘昌教授

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刘昌，男，1962年11月27日出生，汉族，现任武汉大学珞珈学者特聘教授，纳米科学与技术研究中心主任，物理科学与技术学院副院长（分管科研）发表科学研究论文60篇（SCI收录41篇，被EI收录40篇）。

Tel: 027-68752481 ext. 8170       Fax: 027-68752569       Email: chang.liu@whu.edu.cn
办公地点：新物理楼5-426室       Homepage： http://physics.whu.edu.cn/show.asp?id=316

学 历：
1980－1984：浙江大学无线电电子工程学系电子物理与技术专业学习，获工学学士学位；
1984－1987：浙江大学信息与电子工程学系电子物理与器件专业学习，获工学硕士学位；
1996－1999：德国Augsburg大学物理系，获德国理学博士（Dr. rer. nat.）学位。

工作经历：
2003－现在：武汉大学物理科学与技术学院，珞珈学者•特聘教授，博士生导师；
2001－2003：日本National Institute of Advanced Industrial Science and Technology  (AIST), Research fellow
2000－2001：葡萄牙Nuclear and Technological Institute博士后；
1996－1999：德国Augsburg大学物理系，获德国DAAD博士生奖学金；
1987－1996：武汉大学物理系助教、讲师；


教学及指导研究生：
主讲弘毅学堂物理班英文“电磁学”、“近代物理前沿讲座”和研究生“离子束与固体相互作用”等课程；指导博士后研究人员、博士生、硕士生和本科毕业论文。现每年在微电子学与固体电子学、物理和材料科学领域招收博士后，硕－博连读生和访问学者3-5人左右，欢迎联系！


主要学术兼职：
中国真空学会理事，工信部半导体照明标准工作组成员，中国核物理学会常务理事，湖北省核学会常务理事，湖北省物理学会理事长，湖北省有突出贡献优秀中青年专家，湖北省光电子产业优秀人才。国家自然科学奖评委，中组部青年##、拔尖人才、长江学者、工信部电子产业发展基金、973等评审及验收专家，曾任IEEE International Symposium on Photonics and Optoelectronics (SOPO) 国际会议主席（2010-2012）,中韩双边基金委联合资助的信息功能薄膜材料会议中方主席（2010-2011）,中韩双边基金委联合资助的低维电子和光子材料与器件会议中方主席（2012-2013）；现任Current Applied Physics杂志Topical Editor（半导体器件物理），Lead Guest Editor of Nanoscale Research Letters以及多个国际学术杂志论文审稿人。


课题组成员：吴昊（博士、副教授）、艾志伟（讲师）、林颖（博士）
在读博士研究生：王远，甘学伟、王威，王正，陈超，徐旸，王霄，张国桢
已毕业博士：2008：梅菲，张蕾；2009：付秋明；2010：彭挺；2011：吴克敏，周忠坡，潘杨；2013：王倜，艾志伟，林颖，韩涛。
已毕业硕士：2006：陈莉，姜慧纯，王颖，韩林；2007：贾顺鹤；2008：刘博，高晶；2009：罗世俊，李莉华；2010：沈铠；2012：安喆。


主持科研项目：
1.        国家自然科学基金委国际会议资助项目：第二届中韩低维电子和光子材料与器件，2013；
2.        国家自然科学基金委国际会议资助项目：第一届中韩低维电子和光子材料与器件，2012；
3.        国家自然科学基金“离子注入制备InN基n-沟道铁电场效应晶体管”，批准号：11175135，2012-2015；
4.        国家科技部国际合作重点项目：用于XXX的环境友好技术，2011-2013；
5.        国家自然科学基金“基于纳米结构的金属-绝缘体-金属超大容量电容器”，批准号：11074192，2011-2013；
6.        国家自然科学基金委国际会议资助项目：第五届中韩先进信息功能薄膜研讨会，2010；
7.        湖北省自然科学基金“分子束外延制备AlGaN/AlN/GaN高电子迁移率晶体管”，批准号：2009，2009-2010；
8.        国家自然科学基金“离子注入GaN绝缘衬底上外延生长AlGaN/AlN/GaN高电子迁移率晶体管”，批准号：10775110，2008-2010；
9.        参加国家973项目“纳米尺度亚光波长结构的制备、光学性质与器件研究”的子课题—“金属基亚光波长纳米结构的奇异光电性质研究”，批准号：2007CB935304，2007-2010；
10.        宽禁带半导体和铁电体材料异质结构研究，中国科学院上海微系统与信息技术研究所开放基金， 2008-2009；
11.        武汉市科技计划项目“GaN大功率蓝紫色发光二极管外延片研制与应用”，批准号：200710321077，2007-2009；
12.        教育部博士点基金“离子束诱发的宽禁带半导体材料非晶化研究”，批准号：20060486047，2007-2009年；
13.        湖北省“十一五”重大科技攻关招标项目“大功率蓝光外延芯片研制”，批准号：2006AA103A01， 2006-2008；
14.        湖北省“十一五”重大科技攻关招标项目“超高亮度绿光外延芯片研制”，批准号：2006AA103A02，2006-2008；
15.        湖北省“十一五”重大科技攻关招标项目“带有静电保护电路的硅片上倒装焊GaN功率芯片的设计、加工和规模化生产”， 批准号：2006AA103A03，2006-2008；
16.        湖北省光电子产业优秀创新人才资助项目“GaN光电器件研制”，湖北省科技厅2006-2007；
17.        武汉市发展与改革委员会“高效节能环保型半导体白光源产业化前期关键技术研发”，2006-2008；
18.        国家自然科学基金“离子注入宽禁带半导体（GaN和ZnO）非晶化研究”，批准号：10475063，2005-2007；
19.        教育部新世纪人才基金” 宽禁带半导体材料和器件的外延生长及离子注入改性研究”，批准号：NCET-04-0671，2005-2007；
20.        湖北省科技攻关重点项目“GaN发光芯片应用研究”，批准号：2004AA101A06，2004-2007；
21.        湖北省自然科学基金“离子注入GaN局部非晶化研究”，批准号：2004ABA079，2005-2006；
22.        教育部留学回国人员基金“稀土离子掺杂GaN制备白光芯片的理论和实验研究”，批准号： 教外司留[2004]527，2005-2006；
23.        国家自然科学基金委主任基金“稀土离子注入GaN制备白光芯片”，批准号：10345006，2004。


Selected SCI Publications (1997-)：
1.        T. Wang, H. Wu, H. Zheng, J. B. Wang, Z. Wang, C. Chen, Y. Xu, and C. Liu*, Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer, Appl. Phys. Lett. 102, 141912 (2013).
2.        Ying Lin, Xing Qiang Liu, Ti Wang, Chao Chen, Hao Wu, Lei Liao and Chang Liu*, Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition, Nanotechnol. 24, 125705 (Mar. 7, 2013) (5pp)
3.        T. Wang, Hao Wu, Z. Wang, C. Chen, and C. Liu*, Blue light emission from the heterostructured ZnO/InGaN/GaN, Nanoscale Research Lett. 8, 99 (2013).
4.        Zhi Wei Ai, Yun Wu, Hao Wu, Ti Wang, Chao Chen, Yang Xu and Chang Liu*, Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition, Nanoscale Research Lett. 8, 105 (2013).
5.        T. Wang, H. Wu, Z. Wang, C. Chen, and C. Liu*, Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer, Appl. Phys. Lett. 101, 161905 (2012).
6.        T. Wang, Hao Wu, Z. Wang, C. Chen, and C. Liu*, Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction，IEEE Elect. Device Lett., 33,  1030 (2012).
7.        Z. An, F. Q. Liu, Y. Lin, and C. Liu*, The universal definition of spin current, Sci. Rep. 2, 388 (2012).
8.        T. Wang, H. Wu, C. Chen, and C. Liu*，Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers, Appl. Phys. Lett. 100, 011901 (2012).
9.        Yang Pan, Zheng Wang, Ting Peng, Kemin Wu, Hao Wu, C. Liu*, Improvement of structural and electrical properties of Cu2O films with InN epilayers, J. Cryst. Growth,  334， 46 (2011).
10.        Z. P. Zhou, S. J. Luo, Y. Wang, Z. W Ai, C. Liu*, D. F. Wang, Y.P. Lee, Room temperature ferromagnetism and hopping transport in amorphous CrN thin films, Thin Solid Films, 519，1989 (2011).
11.        K. M. Wu, T. Han, K. Shen, B. Liu, T. Peng, Y. Pan, H. D. Sun, and C. Liu*, Growth of vertically aligned InGaN nanorod arrays on p-Type Si substrates for heterojunction diodes, J. Nanosci. Nanotechnol. 10 , 8139 (2010).
12.        Y. Pan, T. Wang, K. Shen, T. Peng, K. M. Wu, W. Y. Zhang, C. Liu*, Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In, J. Cryst. Growth 313, 16 (2010).
13.        T. Peng, K. Shen, H. Wu, C. Hu, and C Liu*, Room-temperature ferromagnetism and electrical properties of Cu2O/GaN heterostructures, J. Phys. D: Appl. Phys. 43, 315101 ( 2010).
14.        Q. M. Fu, T. Peng, Y. Pan and C. Liu*, Effects of AlN/GaN superlattices on structural properties of Al0.45Ga0.55N grown on AlN/sapphire templates, J. Kor. Phys. Soc., 55, 2659 (2009).
15.        H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, K. Shen, B. R. Zhao, C. Liu*, Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructure, J. Phys. D - Appl. Phys. 18, 185302 (2009).
16.        Yuan, Longyan, Fang, Guojia, Zhou, Hai, Gao, Yihua, Liu, Chang, Zhao, Xingzhong，Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing，J. Phys. D – Appl. Phys., 42, 145302 (2009).
17.        Q. M. Fu, T. Peng, C. Liu*, Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy, J. Cryst. Growth, 311, 3553 (2009).
18.        B. Liu, J. Gao, K. M. Wu and C. Liu*，Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy, Solid State Commun. 149, 715 (2009).
19.        Y. Tian, H. B. Lu, L. Liao, J. C. Li, C. Liu, Synthesis and evolution of hollow ZnO microspheres assisted by Zn powder precursor, Solid State Commun. 149, 456 (2009).
20.        H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, and C. Liu*, Temperature- and field-dependent leakage current of epitaxial YMnO3/GaN heterostructure，Appl. Phys. Lett. 94, 122904 (2009).
21.        D. F. Wang, S. Y. Park, Y. S. Lee, T. W. Eom, S. J. Lee,Y. P. Lee, Ch. J. Choi, J. C. Li, and C. Liu, Epitaxial ZnMnO/ZnO Coaxial Nanocable, Crystal Growth & Design 9, 2124 (2009).
22.        K. M. Wu, Y. Pan, and C. Liu*, InGaN nanorod arrays grown by molecular beam epitaxy: growth mechanism, structural and optical properties, Appl. Surf. Sci. 255, 6705 (2009).
23.        Q. M. Fu, T. Peng, F. Mei, Y. Pan, L. Liao and C. Liu*，Relaxation of compressive strain by inclined threading dislocations in Al0.45Ga0.55N grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN superlattices，J. Phys. D - Appl. Phys. 42, 035311 (2009).
24.        H. Li, J. P. Sang, C. Liu, H. B. Lu, J. C. Cao, Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate, Central European J Phys. 6, 638 (2008).
25.        F. Mei, K. M. Wu, Y. Pan, T. Han, and C. Liu*, J. W. Gerlach, and B. Rauschenbach, Structural and optical properties of Cr-doped semi-insulating GaN epilayers, Appl. Phys. Lett. 93, 113507 (2008).
26.        L. Liao, Z. Zheng, B. Yan, J. X. Zhang, H. Gong, J. C. Li, C. Liu, Z. X. Shen, and T. Yu, Morphology controllable synthesis of alpha-Fe2O3 1D nanostructures: Growth mechanism and nanodevice based on single nanowire, J. Phys. Chem. C 112, 10784 (2008).
27.        L. Liao, H. X. Mai, Q. Yuan, H. B. Lu, J. C. Li, C. Liu, C. H. Yan, Z. X. Shen, T. Yu, Ting, Single CeO2 nanowire gas sensor supported with Pt nanocrystals: Gas sensitivity, surface bond states and chemical mechanism, J. Phys. Chem. C 112, 9061 (2008). Highlighted by Nature Asia Materials 06 August 2008.
28.        F. Mei, Q. M. Fu, T. Peng, C. Liu*, M. Z. Peng and J. M. Zhou, Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy, J. Appl. Phys. 103, 094502 (2008)
29.        F. Ren, G. X. Cai, X. H. Xiao, L. X. Fan, C. Liu, D. J. Fu, J. B. Wang, and C. Z. Jiang, Ion irradiation induced hollow and sandwiched nanoparticles, J Appl. Phys. 103, 084308 (2008).
30.        L. Liao, H. B. Lu, M. Shuai, J. C. Li, Y. L. Liu, C. Liu, Z. X. Shen, and T Yu, A novel gas sensor based on field ionization from ZnO nanowires: moderate working voltage and high stability, Nanotechnol. 19, 175501 (2008).
31.        D. F. Wang, S. Y. Park, Y. S. Lee, Y. P. Lee, J. C. Li, and C. Liu，Synthesis and room-temperature ferromagnetism of Zn0.96Mn0.04O/ZnO coaxial nanocable and Zn0.96Mn0.04O film，J. Appl. Phys. 103, 07D126 (2008).
32.        B. Liu, Q. M. Fu, K. M. Wu, C. Liu*, Studies of the growth method and properties of AlN grown by RF-MBE, J. Kor. Phys. Soc. 52，S17 (2008).
33.        L. Zhang, F. Q. Liu, and C. Liu*, Simulations of voltage-controlled yellow or orange emmision from GaN codoed with Eu and Er, J. Kor. Phys. Soc. 52，S67 (2008).
34.        J. Gao, B. Liu, Y. Pan, T. Peng, K. M. Wu, C. Liu*, Effect of rapid thermal annealing on the properties of InN epilayers, J. Kor. Phys. Soc. 52，S128 (2008).
35.        T. Peng, Q. M. Fu and C. Liu*, Deposition of ZnO thin films on GaN substrates, J. Kor. Phys. Soc. 52，S100 (2008).
36.        X. H. Xiao, J. X. Xu, F. Ren, C. Liu, C. Z. Jiang, Fabrication of Ag nanoclusters in single-crystal MgO by high-energy ion implantation, Physica E 40, 705 (2008).
37.        L. Han, F. Mei, C. Liu*, C. Pedro and E. Alves, Comparison of ZnO thin films grown by pulsed laser deposition on sapphire and Si substrates, Physica E 40, 699 (2008).
38.        L. Liao, H. B. Lu, L. Zhang, M. Shuai, J. C. Li, C. Liu, D. J. Fu, and F. Ren，Effect of ferromagnetic properties in Al-doped Zn1-xCoxO nanowires synthesized by water-assistance reactive vapor deposition, J. Appl. Phys. 102, 114307 (2007).
39.        X. H. Xiao, L. P. Guo, F. Ren, J. B. Wang, D. J. Fu, D. L. Chen, Z. Y. Wu, Q. J. Jia, C. Liu, C. Z. Jiang, Formation of metal nanoparticles in silica by the sequential implantation of Ag and Cu, Appl. Phys. A 89, 681 (2007).
40.        L. Liao, H. B. Lu, J. C. Li, C. Liu, D. J. Fu, and Y. L. Liu, The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation, Appl. Phys. Lett., 91, 173110 (2007), selected for the November 5, 2007 issue of Virtual Journal of Nanoscale Science & Technology.
41.        L. Zhang, F. Q. Liu, and C. Liu*, Voltage-controlled variable light emissions from GaN codoped with Eu, Er, and Tm, Appl. Phys. Lett. 91, 143514 (2007).
42.        X. H. Xiao, F. Ren, J. B. Wang, C. Liu, C. Z. Jiang, Formation of aligned silver nanoparticles by ion implantation, Mater. Lett. 61, 4435 (2007).
43.        X. H. Xiao, J. Zhu, Y. R. Li, W. B. Luo, B. F. Yu, L. X. Fan, F. Ren, C. Liu, and C Z Jiang, Greatly reduced leakage current in BiFeO3 thin film by oxygen ion implantation, J. Phys. D - Appl. Phys. 40, 5775 (2007).
44.        L. Liao, K. H. Liu, W. L. Wang, X. D. Bai, E. G. Wang, Y. L. Liu, J. C. Li, and C. Liu, Multiwall Boron Carbonitride/Carbon Nanotube Junction and Its Rectification Behavior, J. Am. Chem. Soc. 129, 9562 (2007).
45.        H. Li, J. P. Sang, F. Mei, F. Ren, L. Zhang, C. Liu, Observation of ferromagnetism at room temperature for Cr+ ions implanted ZnO thin films. Appl. Surf. Sci. 253, 8524 (2007).
46.        L. Zhang, F. Q. Liu, C. Liu*, The influence of external electromagnetic field on an exciton spin current, J. Phys. Condens. Matter 19, 346222 (2007).
47.        L. Zhang, H. C. Jiang, C. Liu*, J. W. Dong, P. Chow, Annealing of Al2O3 thin films prepared by atomic layer deposition, J. Phys. D - Appl. Phys. 40, 3707 (2007).
48.        L. Liao, W. F. Zhang, H. B. Lu, J. C. Li, D. F. Wang, C. Liu, D. J. Fu, Investigation of the temperature dependence of the field emission of ZnO nanorods, Nanotechnol. 18, 225703 (2007).
49.        L. Liao, Z. Xu, K. H. Liu, W. L. Wang, S. Liu, X. D. Bai, E. G. Wang, J. C. Li and C. Liu, Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property, J. Appl. Phys. 101, 114306 (2007), selected for the June 18, 2007 issue of Virtual Journal of Nanoscale Science & Technology.
50.        L. Liao, J. C. Li, C. Liu, Z. Xu, W. L. Wang, S. Liu, X. D. Bai, E. G. Wang, Field emission of GaN-filled carbon nanotubes: High and stable emission current, J. Nanosci. Nanotechnol. 7, 1080 (2007).
51.        L. Liao, H. B. Lu, J. C. Li, H. He, D. F. Wang, D. J. Fu, C. Liu, W. F. Zhang, Size dependence of gas sensitivity of ZnO nanorods, J. Phys. Chem C 111, 1900 (2007).
52.        F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, T. Oku, Controlling the morphology of Ag nanoclusters by ion implantation to different doses and subsequent annealing, Phys. Rev. Lett. 97, 165501 (2006).
53.        F. Mei, C. Liu*, L. Zhang, F. Ren, L. Zhou, W. K. Zhao, Y. L. Fang, Microstructural study of binary TiO2:SiO2 nanocrystalline thin film, J. Cryst. Growth 292, 87 (2006).
54.        X. Z. Shang, S. D. Wu, C. Liu, W. X. Wang, L.W. Guo,Q. Huang and J. M. Zhou, Low temperature step-graded InAlAs/GaAs metamorphic buffer grown by molecular beam epitaxy, J. Phys. D: Appl. Phys. 39, 1800 (2006).
55.        F. Mei, C. Liu*, L. Zhou, W. K. Zhao, Y. L. Fang, J. B. Wang, and Y. Y. Ren, Effect of annealing temperature on binary TiO2:SiO2 nanocrystalline thin films, J. Kor. Phys. Soc. 48, 1509 (2006).
56.        F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, Fabrication and annihilation of nanovoids in Cu nanoclusters by ion implantation into silica and subsequent annealing, Appl. Phys. Lett. 88, 183114 (2006).
57.        L. Chen, Z. Q. Chen, X. Z. Shang, C. Liu*, S. Xu, Q. Fu, Effect of annealing temperature on density of ZnO quantum dots, Solid State Commun. 137, 561 (2006).
58.        L. Liao, J. C. Li, D. F. Wang, C. Liu, M. Z. Peng, J. M. Zhou, Size dependence of Curie temperature in Co+ ion implanted ZnO nanowires, Nanotechnol. 17, 830 (2006).
59.        L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, Electron field emission studies on ZnO nanowires, Mater. Lett. 59, 2465 (2005).
60.        F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135, 268 (2005).
61.        L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, L. X. Fan, Field emission property improvement of ZnO nanowires coated with amorphous carbon and carbon nitride films, Nanotechnol. 16, 985 (2005).
62.        C. Liu, Q. Fu, J.B. Wang, W.K. Zhao, Y.L. Fang, T. Mihara, M. Kiuchi, Structural characterization of nanocrystalline TiO2:SiO2 powders and thin film at 35 °C, J. Kor. Phys. Soc. 46, S104 (2005).
63.        L. Liao, J. C. Li, D. H. Liu, C. Liu,  D. F. Wang , W. Z .Song, Q. Fu, Self-assembly of aligned ZnO nanoscrews: Synthesis, growth, configuration and field emission, Appl. Phys. Lett. 86, 083106 (2005) (Cover image).
64.        L. Liao, D. H. Liu, J. C. Li, C. Liu, Q. Fu, M. S. Ye, Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth, Appl. Surf. Sci. 240, 175 (2005).
65.        F. Ren, C. Z. Jiang, H. B. Chen, Y. Shi, C. Liu, J. B. Wang, Metal alloy and monoelemental nanoclusters in silica formed by sequential ion implantation and annealing in selected atmosphere, Physica B-CONDENSED MATTER 353, 92 (2004).
66.        T. Asanuma, T. Matsutani, C. Liu, T. Mihara, and M. Kiuchi, Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma, J. Appl. Phys. 95, 6011 (2004).
67.        T. Matsutani, T. Asanuma , C. Liu, M. Kiuchi , and T. Takeuchi Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane, Surf. Coat. Technol. 177-178, 365 (2004).
68.        T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi and T. Takeuchi, Ion-assisted chemical vapor deposition of Si-C film with organosilicon precursor, Surf. Coat. Technol. 169-170, 624 (2003).
69.        C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition, Solid State Commun. 126, 509 (2003).
70.        W. K. Zhao, L. Zhou, C. Liu, L. Hu, Y. Fang, and M. Kiuchi, Photocatalytic activity of TiO2 prepared by liquid phase deposition, Acta Chim. Sinica 61, 699 (2003).
71.        C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 348 (2003).
72.        T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 343 (2003).
73.        L. Zhou, C. Liu, W. Zhao, L. Hu, Y. Fang, Photocatalytic activity of Fe3+-doped TiO2 thin films prepared via liquid phase deposition, Chinese J. Catal. 24, 359 (2003).
74.        C. Liu, T. Matsutani, T. Asaluma, K. Murai, M. Kiuchi, E. Alves, and M. Reis, Room-temperature growth of crystalline indium tin oxide films on glass using low energy oxygen ion beam assisted deposition, J. Appl. Phys. 93, 2262 (2003).
75.        C. Liu, T. Matsutani, N. Yamamoto, and M. Kiuchi, High-quality indium tin oxide films prepared at roome temperature by oxygen ion beam assisted deposition, Europhys. Lett. 59, 606 (2002).
76.        C. Liu, E. Alves, A. R. Ramos, M. F. da Silva, J. C. Soares, T. Matsutani, and M. Kiuchi, Annealing behavior and lattice location of Mn+ implanted GaN, Nucl. Instr. Meth. B, 191, 544 (2002).
77.        E. Alves, C. Liu, E. B. Lopes, M. F. da Silva, J. C. Soares, J. Soares, C. Boemare, M. J. Soares, and T. Monteiro, Study of calcium ion implanted GaN, Nucl. Instr. Meth. B 190, 625 (2002).
78.        T. Monteiro, C. Boemare, M. J. Soares, E. Alves, and C. Liu, Green and red emission in Ca implanted GaN samples, Physica B 308-310, 42 (2001).
79.        C. Liu, A. Wenzel, B. Rauschenbach, E. Alves, A. D. Sequeira, N. Franco, M. F. da Silva, J. C. Soares, and X. J. Fan, Amorphization of GaN by ion implantation, Nucl. Instr. Meth. B 178, 200 (2001).
80.        E. Alves, C. Liu, J. C. Waerenborgh, M. F. da Silva, and J. C. Soares, Study of Fe ion implanted GaN, Nucl. Instr. Meth. B, 175-177, 241 (2001).
81.        C. Liu, E. Alves, A. Sequera, N. Franco, M. F. da Silva, and J. C. Soares, Fe ion implantation in GaN: damage, annealing, and lattice site location, J. Appl. Phys. 90, 81 (2001).
82.        C. Liu, A. Wenzel, J. W. Gerlach, X. J. Fan, and B. Rauschenbach, Annealing study of ion implanted GaN, Surf. Coat. Technol. 128-129, 455 (2000).
83.        C. Liu, Structural Characterization of Ion Implanted Gallium Nitride, Shaker, Aachen, 2000 (ISBN:3-8265-7107-X).
84.        C. Liu, M. Schreck, A. Wenzel, B. Mensching, and B. Rauschenbach, Damage buildup and removal in Ca-ion implanted GaN, Appl. Phys. A 70, 53 (2000).
85.        A. Wenzel, C. Liu, and B. Rauschenbach, Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN, Mater. Sci. & Eng. B 59, 191 (1999).
86.        C. Liu, A. Wenzel, K. Volz, and B. Rauschenbach, Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride, Nucl. Instr. Meth. B 148, 396 (1999).
87.        W. Limmer, W. Ritter, R. Sauer, B. Mensching, C. Liu, and B. Rauschenbach, Raman scattering in ion-implanted GaN, Appl. Phys. Lett. 72, 2589 (1998).
88.        C. Liu,, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach, Ion implantation in GaN at liquid-nitrogen temperature: structural characteristics and amorphization, Phys. Rev. B 57, 2530 (1998).
89.        B. Mensching, C. Liu, B. Rauschenbach, K. Kornitzer, and W. Ritter, Characterization of Ca and C implanted GaN, Mater. Sci. & Eng. B 50, 105 (1997).
90.        C. Liu, B. Mensching, K. Volz, and B. Rauschenbach, Lattice expansion of Ca and Ar ion implanted GaN, Appl. Phys. Lett. 71, 2313 (1997).
学术报告（conference presentation）：
1．        Influence of substrate temperature on damage and doping of ion implanted GaN, 11th Ion Beam Modification of Materials (IBMM 1998), Amsterdam, Netherland, Sept 1-5, 1998, invited talk (大会报告)
2．        Structural characterization of ion implanted GaN, Department of Physics, University of Leipzig, invited talk, Dec. 18, 1999.
3．        Amorphization of GaN by ion implantation, E-MRS 2000， Symp. R, oral presentation 2000.
4．        Preparation and characterization of indium tin oxide film grown at room temperature, Japan 4th Symposium on Beam Science and Technology for an Emergent Network (BESTEN 2002), invited talk, Osaka, Japan 2002.
5．        Characterization of indium tin oxide films prepared by oxygen ion beam assisted deposition, 1st Asian Symposium on Ion and Plasma Surface Finishing, oral presentation, 2002。
6．        Preparation and characterization of TiO2 and TiO2:SiO2 nanocrystalline powders and thin films, 11th Sino-Korea Joint Symp. on Thin Films, June 28-July 5, 2004, Chengdu, China.
7．        Preparation and characterization of nanocrystalline titanium and zinc oxides, Oct.14, 2004, Leibniz Institute for Surface Modification, Leipzig, Germany
8．        Ion implantation into GaN: damage, annealing and lattice site location, 1st China-Korea Joint Symp. on Wide-Bandgap Semiconductors & Spintronics, May 11-15, 2005, Wuhan University, China.
9．        Amorphization and lattice location of ion implanted GaN，Singapore-Sino Joint Symp. on Research Frontiers in Physics, Aug. 28-30, 2005, National University of Singapore.
10．        Preparation, characterization and application of nanooxides, 4th Inter. Conf. on Adv. Mater. & Dev. (ICAMD), Jeju, Korea, Dec 5-7, 2005, invited talk.
11．        Ion implantation into GaN, SVT Associates, MN, USA, Feb. 7, 2006, invited talk.
12．        Lattice location of dopants in GaN, 1st Korea-China Symp. on Advanced Functional Films for Information, Jeju, Korea, Sept. 20-24, 2006, invited talk.
13．        Growth and Ion implantation into GaN material and device, Hanyang University, Seoul, Korea, Sept. 25, 2006. invited talk.
14．        刘昌，范湘军，离子注入GaN, 2006年全国荷电粒子源、粒子束学术会议，武汉，2006年10月14-19日，大会邀请报告。
15．        梅菲，彭挺，刘昌，分子束外延生长AlGaN/GaN高电子迁移率晶体管，2006年全国真空年会，2006年10月21-24日，西安，电子材料与器件分会报告。
16．        刘昌，第三带宽禁带半导体材料和器件，全国集成电路工艺计算机辅助设计系统研讨会，2006年11月28-30日，湖北大学，邀请报告。
17．        Reduction of Threading Dislocations in AlN Epilayers by Interlayer Interruption, 2nd China-Korea Symp. on Advanced Functional Films for Information, Jinan, China, July 7-10, 2007, invited talk.
18．        Simulation of voltage-controlled variable light emissions from GaN codoped with Eu, Er, and Tm, 2nd China-Korea Symp. on Advanced Functional Films for Information, Jinan, China, July 7-10, 2007.
19．        Fabrication of ZnO/GaN heterostructure on GaN substrate by e-beam evaporation, 2nd China-Korea Symp. on Advanced Functional Films for Information, Jinan, China, July 7-10, 2007.
20．        MBE growth of AlN thin films and AlGaN/GaN heterostructures，3rd China-Korea Joint Symp. on Wide-Bandgap Semiconductors & Spintronics, Jeju, Korea, Aug. 26-29, 2007, invited talk.
21．        离子注入GaN及其在器件中的应用，2007年中国物理年会半导体物理分会邀请报告，2007年9月18-20日，南京大学。
22．        Effect of AlN/GaN superlattices on Al0.45Ga0.55N epitaxial layer grown on AlN/sapphire templates by molecular beam epitaxy，Q. M. Fu, T. Peng, Y. Pan, K. M. Wu, and C. Liu, 3rd China-Korea Symp. on Advanced Functional Films for Information, Inha University, Incheon, Korea, Sept. 28 – Oct. 2, 2008. invited talk.
23．        Growth of AlGaN/GaN hetero-structures on transition metal doped GaN templates，Photonics and OptoElectronics Meetings (POEM2009) （"Solar Cells, Solid State Lighting and Information Display Technologies (SSID)"）, Wuhan, P.R. China，August 8-10 2009, invited talk.
24．        Preparation of Semi-Insulating GaN Templates for AlGaN/GaN Heterostructures, 1st International Symposium on Photonics and Optoelectronics (SOPO 2009), Wuhan, China, Aug.14-16, Plenary Speech.
25．        Investigation on the fabrication and transport properties of YMnO3/GaN, 4th China-Korea Symp. on Advanced Functional Films for Information, Lanzhou, China, Aug.16-21, 2009.
26．        YMnO3在GaN上的集成生长与漏电性能研究，2009年中国物理年会半导体物理分会邀请报告，2009年9月18-20日，上海交通大学。
27．        Cu2O/GaN heterostructures, 2nd International Symposium on Photonics and Optoelectronics (SOPO 2010), Chengdu, China, Jun.19-21. Oral presentation.
28．        Structural, electrical, optical and room-temperature ferromagnetic properties of Cu2O/GaN hetero-structures，5th China-Korea Symp. on Advanced Functional Films for Information,  Ulsan  University， Ulsan, Korea, Aug. 17-21, 2010. invited talk.
29．        氮化物高电子迁移率晶体管，中青年科学家威海论坛2011主题：先进材料与核科学技术， 2011年7月27-8月2日，山东威海，邀请报告。
30．        绝缘GaN衬底制备及HEMT与铁电集成，第九届全国分子束外延学术会议， 2011年7月4-8日，哈尔滨，大会邀请报告。
31．        武汉大学拔尖人才培养的几点尝试，2011年全国大学物理教学研讨会，2011年10月28-30日，山东济南，大会邀请报告。
32．        ALD growth of the non-polar ZnO thin films，第一届国际ALD应用大会暨第二届中国ALD学术交流会，2012年10月15-16日，上海复旦大学，口头报告。
33．        Growth and optical properties of ZnO/AlN/GaN p-I-n junctions，第一届国际ALD应用大会暨第二届中国ALD学术交流会，2012年10月15-16日，上海复旦大学，口头报告。
34．        ZnO/Si and ZnO/GaN heterojunctions: structural, electrical and optical properties， 1st China-Korea Symposium on Low Dimensional Electronic and Photonic Materials and Devices, Guilin, China, Nov. 5-9. 2012，invited talk.
35．        Nonpolar Plane ZnO Films deposited by Atomic Layer Deposition，2012 Collaborative Conference on Crystal Growth (3CG), Hilton Orlando at SeaWorld, Orlando Florida, USA, Dec. 11-14, 2012, invited talk.
36．        Study on ZnO-based heterojunctions: structural, electrical and optical properties, The WCU Korea-China Workshop on Nitride Semiconductors 2013, Seoul National University, Seoul, Korea, July 20 ~ 23, 2013. invited talk.
37．        ZnO-based heterojunctions: structural, electrical and optical properties，The 8th Pacific Rim International Congress on Advanced Materials and Processing (PRICM8)，Hawaii, Aug. 4-9, 2013, oral presentation.
38．        原子层沉积法制备极性、半极性和非极性面ZnO异质结器件，湖北省物理学会2013年年会，2013年8月20-24日，邀请报告。
39．        Near-infrared random lasing from m-plane ZnO, 2nd China-Korea Symposium on Low Dimensional Electronic and Photonic Materials and Devices, Busan, Korea, Aug. 26-30,   invited talk.
40．        Growth of polar, semipolar and nonpolar ZnO thin films by atomic layer deposition andstudy on shape-dependent localized surface Plasmon enhanced UV-emission，11th International Conference on Nano Science and Nano Technology  (ICNST 2013), Chosun University, Gwangju, Korea，Nov. 7-8, 2013,  invited talk.
专利:
1． Kiuchi, C. Liu, and T. Matsutani, Preparation of Transparent Conducting Films, Japanese Patent No.: 2002-180762
2． 刘昌，梅菲，一种GaN绝缘或半绝缘外延层的制备方法，专利批准号：ZL200710052167.2，授权公告日：2009年2月25日
3． 刘昌，张蕾，梅菲，刘福庆，一种电致发光二极管的制备方法，ZL200710052646.4，授权公告日：2009年5月14日
4． 刘昌，付秋民，刘博，一种高质量AlN薄膜的制备方法，专利批准号：ZL200810048681.3授权公告日：2011年8月17日
5． 刘昌，王倜，吴昊，陈超，一种在硅衬底上生长m面ZnO的方法，ZL201210006637.2，授权公告日：2014年2月18日

tuandui

2018自然科学基金面上项目-离子注入制备Ga2O3 n-沟道场效应晶体管
批准号        11875212        学科分类        离子注入及离子束材料改性 ( A050406 )
负责人        刘昌        职称                单位名称        武汉大学
资助金额        66万元        项目类别        面上项目        起止年月        2019年01月01日 至 2022年12月31日