陕西师范大学材料科学与工程学院新能源材料研究团队王大鹏

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王大鹏（副教授）
Ph. D., Kochi University of Technology,Japan. (2008-2012)
工学博士，高知工科大学，日本
Post-doc., School of Environment Science and Technology, Kochi University of Technology,Japan(2012-2015)
博士后，高知工科大学环境理工学群，日本
副教授，陕西师范大学（2015.12-）
E-mail: dpwang@snnu.edu.cn

研究方向
金属氧化物薄膜晶体管设计、制备、测试
氧化物纳米结构的制备与应用
半导体材料薄膜形成技术与应用
代表性成果
近年承担项目
1.      主持陕西师范大学引进人才科研启动基本资金项目，50万，2015年12月-2018年12月。
近年发表论文
1.      Dapeng Wang, Jingxin Jiang, Mamoru Furuta, Investigation of Carrier Generation Mechanism in Fluorine-doped n+-In-Ga-Zn-O for Self-Aligned Thin-Film Transistors. J. Display Technol., (2015). DOI: 10.1109/JDT.2015.2472981
2.      Mai Phi Hung, Dapeng Wang, Mamoru Furuta, Origin of the alternative current (AC-) gate bias improving the NBIS stability of IGZO TFTs. ECS Solid State Lett., 4(12) (2015) Q66-Q68.
3.      Y. Koga, T. Matsuda, M. Kimura, WANG Dapeng, FURUTA Mamoru, M. Kasami, S. Tomai, K. Yano, Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-Film Transistors. IEICE Trans. on Electronics., E98-C(11) (2015) 1028-1031.
4.      Mai Phi Hung, Dapeng Wang, Mamoru Furuta, Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In-Ga-Zn-O TFT by Conductance Method. IEEE Trans. Electron Devices, 62(11) (2015) 3697-3702.
5.      Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang, Doping and Defect Passivation in In-Ga-Zn-O by Fluorine. ECS Transaction, 67(1) (2015) 41-49.
6.      Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Mamoru Furuta, Suppression of Degradation Induced by Negative Gate bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias. ACS Appl. Mat. Inter., 6(8) (2014) 5713-5718.
7.      Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Mamoru Furuta, Drain Bias Effect on the Instability of Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Gate Bias and Illumination Stress. ECS Transactions, 64(10) (2014) 65-70.
8.      Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Chaoyang Li, Mamoru Furuta, Effect of Drain Bias on Negative Gate Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors, Jpn. J. Appl. Phys., 53(3S1) (2014) 03CC01-1-4.
9.      Jingxin Jiang, Toda Tatsuya, Mai Phi Hung, Dapeng Wang, Mamoru Furuta, Highly Stable Fluorinated In-Ga-Zn-O Thin-Film Transistors under Positive Gate Bias and Temperature Stress. Appl. Phys. Express, 7 (2014) 114103-1-4.  
10.  Toda Tatsuya, Dapeng Wang, Jingxin Jiang, Mai Phi Hung, Mamoru Furuta, Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor properties, IEEE Trans. Electron Devices, 61(11) (2014) 3762-3767.  
11.  Mai Phi Hung, Dapeng Wang, Tasuya Toda, Jingxin Jiang, Mamoru Furuta, Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress. ECS J. Solid Sci. Technol., 3(9) (2014) Q3023-Q3026.
12. Jingxin Jiang, Mamoru Furuta, Dapeng Wang, Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor with Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride. IEEE Electron Devices Lett., 35(9) (2014) 933-935.